Two-Step Deposition of Silicon Oxide Films Using the Gas Phase Generation of Nanoparticles in the Chemical Vapor Deposition Process

نویسندگان

چکیده

Non-classical crystallization, in which charged nanoparticles (NPs) are the building blocks of film growth, has been extensively studied chemical vapor deposition (CVD). Here, behavior silicon oxide films by two-step growth process, where NPs generated gas phase at high temperature and deposited as low temperature, was CVD process. Although we supplied SiH4, H2, N2, turned out to be oxide, is attributed relatively poor vacuum. Also, were captured on transmission electron microscopy (TEM) carbon membranes a copper grid for 10 s under various conditions. When quartz tube with conical nozzle used, size increased drastically increasing processing time (or delay time) porous rough surface deposited. without however, did not increase much dense smooth These results suggest that an important parameter temperatures.

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ژورنال

عنوان ژورنال: Coatings

سال: 2021

ISSN: ['2079-6412']

DOI: https://doi.org/10.3390/coatings11030365